STMicroelectronicsBUL1102EFPGP BJT
Trans GP BJT NPN 450V 4A 70000mW 3-Pin(3+Tab) TO-220FP Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| EA | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 450 | |
| 12 | |
| 150 | |
| 2 | |
| 1.5@400mA@2A | |
| 1.5@400mA@2A | |
| 4 | |
| 35@250mA@5V|12@2A@5V | |
| 70000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 16.4(Max) mm |
| Largeur du paquet | 4.6(Max) mm |
| Longueur du paquet | 10.4(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this NPN BUL1102EFP GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 12 V. Its maximum power dissipation is 70000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 450 V and a maximum emitter base voltage of 12 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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