Infineon Technologies AGBSZ123N08NS3GATMA1MOSFET
Trans MOSFET N-CH 80V 10A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.5 | |
| -55 to 150 | |
| 10 | |
| 100 | |
| 1 | |
| 12.3@10V | |
| 19@10V | |
| 19 | |
| 3.8 | |
| 6.3 | |
| 54 | |
| 6.5 | |
| 1300@40V | |
| 15@40V | |
| 2 | |
| 350 | |
| 2100 | |
| 4 | |
| 18 | |
| 19 | |
| 12 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 10.3@10V|13.9@6V | |
| 2.1 | |
| 160 | |
| 60 | |
| 1 | |
| 4.9 | |
| 45 | |
| 1.2 | |
| 2.8 | |
| 20 | |
| 10 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 3.3 |
| Longueur du paquet | 3.3 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' BSZ123N08NS3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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