Infineon Technologies AGBSZ100N06NSATMA1MOSFET
Trans MOSFET N-CH 60V 40A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3.3 | |
| 40 | |
| 100 | |
| 1 | |
| 10@10V | |
| 12@10V | |
| 12 | |
| 860@30V | |
| 2100 | |
| 2 | |
| 2 | |
| 10 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 8.5@10V|12.4@6V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 3.3 |
| Longueur du paquet | 3.3 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Amplify electronic signals and switch between them with the help of Infineon Technologies' BSZ100N06NSATMA1 power MOSFET. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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