Infineon Technologies AGBSZ065N03LSATMA1MOSFET
Trans MOSFET N-CH 30V 12A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 20 | |
| 2 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 6.5@10V | |
| 5.2@4.5V|10@10V | |
| 10 | |
| 1.7 | |
| 1.9 | |
| 10 | |
| 2.6 | |
| 670@15V | |
| 40@15V | |
| 1.2 | |
| 270 | |
| 2100 | |
| 2.4 | |
| 3.4 | |
| 12 | |
| 2.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 5.4@10V|6.9@4.5V | |
| 2.1 | |
| 196 | |
| 60 | |
| 0.89 | |
| 2.9 | |
| 1 | |
| 0.5 | |
| 2 | |
| 20 | |
| 12 | |
| Installation | Surface Mount |
| Largeur du paquet | 3.4(Max) |
| Longueur du paquet | 3.4(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Amplify electronic signals and switch between them with the help of Infineon Technologies' BSZ065N03LSATMA1 power MOSFET. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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