Infineon Technologies AGBSZ035N03MSGATMA1MOSFET
Trans MOSFET N-CH 30V 18A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 18 | |
| 3.5@10V | |
| 27@4.5V|56@10V | |
| 56 | |
| 4300@15V | |
| 2100 | |
| 4.8 | |
| 5.8 | |
| 38 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.9@10V|3.4@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 3.3 mm |
| Longueur du paquet | 3.3 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSZ035N03MSGATMA1 power MOSFET. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.
| EDA / CAD Models |
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