Infineon Technologies AGBSZ025N04LSATMA1MOSFET
Trans MOSFET N-CH 40V 22A 8-Pin TSDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| OptiMOS | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| 20 | |
| 2 | |
| 22 | |
| 100 | |
| 1 | |
| 2.5@10V | |
| 19@4.5V|37@10V | |
| 37 | |
| 2630@20V | |
| 2100 | |
| 5 | |
| 7 | |
| 27 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.4@4.5V|2@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 3.3 mm |
| Longueur du paquet | 3.3 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TSDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Compared to traditional transistors, BSZ025N04LSATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2100 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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