Infineon Technologies AGBSS83PH6327XTSA1MOSFET
Trans MOSFET P-CH 60V 0.33A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| SIPMOS | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 0.33 | |
| 2000@10V | |
| 2.38@10V | |
| 2.38 | |
| 1.1 | |
| 0.12 | |
| 37.5 | |
| 62@25V | |
| 19 | |
| 360 | |
| 61 | |
| 71 | |
| 56 | |
| 23 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 1400@10V|2000@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Make an effective common source amplifier using this BSS83PH6327XTSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology.
| EDA / CAD Models |
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