Infineon Technologies AGBSS159NH6327XTSA2MOSFET
Trans MOSFET N-CH 60V 0.23A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.4 | |
| -55 to 150 | |
| 0.23 | |
| 10 | |
| 130000(Min) | |
| 3500@10V | |
| 1.4@5V | |
| 0.42 | |
| 0.22 | |
| 3.3 | |
| 29@25V | |
| 3.1@25V | |
| 3.5 | |
| 7.4 | |
| 360 | |
| 9 | |
| 2.9 | |
| 9 | |
| 3.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1700@10V|3900@0V | |
| 0.92 | |
| 0.81 | |
| 0.8 | |
| 10.4 | |
| 1.2 | |
| 2.8 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Looking for a component that can both amplify and switch between signals within your circuit? The BSS159NH6327XTSA2 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 360 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in depletion mode.
| EDA / CAD Models |
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