The ON Semiconductor MOSFETs have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It has 1 number of elements per chip. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. Its maximum power dissipation is 360 mW. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount package
Application:
• Small servo motor control
• Power MOSFET gate drivers
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.18um to 2um | |
| Enhancement | |
| N | |
| 1 | |
| 50 | |
| ±20 | |
| 1.5 | |
| -55 to 150 | |
| 0.22 | |
| 100 | |
| 0.5 | |
| 3500@10V | |
| 1.7@10V | |
| 1.7 | |
| 0.4 | |
| 0.1 | |
| 27@25V | |
| 6@25V | |
| 0.8 | |
| 13 | |
| 360 | |
| 7 | |
| 9 | |
| 20 | |
| 2.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 700@10V|1000@4.5V | |
| 0.36 | |
| 0.88 | |
| 350 | |
| 0.8 | |
| 2 | |
| 1.4 | |
| 1.3 | |
| 20 | |
| 0.22 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
| EDA / CAD Models |
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