Infineon Technologies AGBSS126H6327XTSA2MOSFET
Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 600 | |
| ±20 | |
| 1.6 | |
| -55 to 150 | |
| 0.021 | |
| 100 | |
| 500000@10V | |
| 1.4@5V | |
| 1.2 | |
| 0.05 | |
| 13.2 | |
| 21@25V | |
| 1@25V | |
| 2.7 | |
| 2.4 | |
| 500 | |
| 115 | |
| 9.7 | |
| 14 | |
| 6.1 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 280000@10V|320000@0V | |
| 0.085 | |
| 0.81 | |
| 0.1 | |
| 160 | |
| 1.2 | |
| 2 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.3 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this BSS126H6327XTSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device utilizes sipmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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