onsemiBSS123LT1GMOSFET
Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R
The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 100 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free and are RoHS Compliant
Application:
• Small servo motor control
• Power MOSFET gate drivers
• Logic level transistor
• High speed line drivers
• Power supply
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| 0.8um to 3um | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 2.6 | |
| -55 to 150 | |
| 0.17 | |
| 50 | |
| 15 | |
| 6000@10V | |
| 20@25V | |
| 4@25V | |
| 1.6 | |
| 9 | |
| 225 | |
| 40 | |
| 20 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 20 | |
| 0.225 | |
| 0.68 | |
| 3.2 | |
| 1.3 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
| EDA / CAD Models |
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