onsemiBSP52T3GDarlington BJT
Trans Darlington NPN 80V 1A 1250mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single Dual Collector | |
| 1 | |
| 80 | |
| 90 | |
| 5 | |
| 1.9@0.5mA@500mA | |
| 1 | |
| 1.3@0.5mA@500mA | |
| 1000@150mA@10V|2000@500mA@10V | |
| 1250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.57 mm |
| Largeur du paquet | 3.5 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
Look no further than ON Semiconductor's NPN BSP52T3G Darlington transistor, which can amplify the signal to provide higher current gains. This product's maximum continuous DC collector current is 1 A, while its minimum DC current gain is 1000@150mA@10 V|2000@500mA@10V. It has a maximum collector emitter saturation voltage of 1.3@0.5mA@500mA V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.9@0.5mA@500mA V. Its maximum power dissipation is 1250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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