Infineon Technologies AGBSP295H6327XTSA1MOSFET
Trans MOSFET N-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 1.8 | |
| -55 to 150 | |
| 1.8 | |
| 10 | |
| 0.1 | |
| 300@10V | |
| 14@10V | |
| 14 | |
| 5.6 | |
| 0.9 | |
| 38 | |
| 295@25V | |
| 45@25V | |
| 0.8 | |
| 95 | |
| 1800 | |
| 19 | |
| 9.9 | |
| 27 | |
| 5.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 220@10V|390@4.5V | |
| 7.2 | |
| 115 | |
| 0.84 | |
| 3.1 | |
| 36 | |
| 1.3 | |
| 1.1 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6 |
| Largeur du paquet | 3.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
This BSP295H6327XTSA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 1800 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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