Infineon Technologies AGBSO110N03MSGXUMA1MOSFET
Trans MOSFET N-CH 30V 10A 8-Pin DSO T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 10 | |
| 11@10V | |
| 7.2@4.5V|15@10V | |
| 15 | |
| 1100@15V | |
| 1560 | |
| 4.4 | |
| 4.4 | |
| 9.5 | |
| 7.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.65(Max) mm |
| Largeur du paquet | 4(Max) mm |
| Longueur du paquet | 5(Max) mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | DSO |
| 8 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the BSO110N03MSGXUMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.
| EDA / CAD Models |
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