Infineon Technologies AGBSL308PEH6327XTSA1MOSFET
Trans MOSFET P-CH 30V 2A 6-Pin TSOP T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Dual | |
| Enhancement | |
| P | |
| 2 | |
| 30 | |
| ±20 | |
| 1 | |
| 2 | |
| 80@10V | |
| 5@10V | |
| 5 | |
| 376@15V | |
| 500 | |
| 2.8 | |
| 7.7 | |
| 15.3 | |
| 5.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 62@10V|88@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) |
| Largeur du paquet | 1.6 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | TSOP |
| 6 |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the BSL308PEH6327XTSA1 power MOSFET. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
Contrer efficacement les menaces des drones
Apprenez à combiner traitement intelligent, détection avancée et réponse rapide dans un système de défense unifié contre les drones.