Infineon Technologies AGBSC100N06LS3GATMA1MOSFET
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| 20 | |
| 2.2 | |
| -55 to 150 | |
| 12 | |
| 100 | |
| 1 | |
| 10@10V | |
| 15@4.5V|34@10V | |
| 34 | |
| 3 | |
| 10 | |
| 36 | |
| 9 | |
| 2600@30V | |
| 24@30V | |
| 1.2 | |
| 500 | |
| 2500 | |
| 8 | |
| 58 | |
| 19 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.8@10V|11.8@4.5V | |
| 2.5 | |
| 220 | |
| 62 | |
| 0.92 | |
| 4 | |
| 35 | |
| 1.2 | |
| 1.7 | |
| 20 | |
| 12 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.9 |
| Longueur du paquet | 5.15 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Create an effective common drain amplifier using this BSC100N06LS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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