Infineon Technologies AGBSC057N08NS3GATMA1MOSFET
Trans MOSFET N-CH 80V 16A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| 20 | |
| 3.5 | |
| -55 to 150 | |
| 16 | |
| 100 | |
| 1 | |
| 5.7@10V | |
| 42@10V | |
| 42 | |
| 8 | |
| 13 | |
| 77 | |
| 13 | |
| 2900@40V | |
| 30 | |
| 2 | |
| 780 | |
| 2500 | |
| 9 | |
| 14 | |
| 32 | |
| 16 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 6.4@6V|4.7@10V | |
| 2.5 | |
| 432 | |
| 62 | |
| 0.9 | |
| 4.6 | |
| 48 | |
| 1.2 | |
| 2.8 | |
| 20 | |
| 16 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Compared to traditional transistors, BSC057N08NS3GATMA1 power MOSFETs, developed by Infineon Technologies, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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