Infineon Technologies AGBSC052N03LSATMA1MOSFET
Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 17 | |
| 100 | |
| 1 | |
| 5.2@10V | |
| 5.9@4.5V|12@10V | |
| 12 | |
| 770@15V | |
| 2500 | |
| 2.4 | |
| 3.6 | |
| 13 | |
| 2.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.3@10V|5.8@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common gate amplifier using this BSC052N03LSATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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