Infineon Technologies AGBSC036NE7NS3GATMA1MOSFET
Trans MOSFET N-CH 75V 20A 8-Pin TDSON EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 75 | |
| ±20 | |
| 3.8 | |
| 20 | |
| 3.6@10V | |
| 63.4@10V | |
| 63.4 | |
| 4400@37.5V | |
| 2500 | |
| 10 | |
| 18 | |
| 38 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.9@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.9 mm |
| Longueur du paquet | 5.15 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | TDSON EP |
| 8 | |
| Forme de sonde | No Lead |
Increase the current or voltage in your circuit with this BSC036NE7NS3GATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with optimos technology.
| EDA / CAD Models |
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