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Infineon Technologies AGBCR119WH6327XTSA1BJT numérique
Trans Digital BJT NPN 50V 0.1A 250mW 3-Pin SOT-323 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Single | |
| 50 | |
| 0.1 | |
| 120@5mA@5V | |
| 150 | |
| 4.7 | |
| 0.3@0.5mA@10mA | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9(Max) mm |
| Largeur du paquet | 1.25 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-323 |
| 3 | |
| Forme de sonde | Gull-wing |
Are you looking to build a digital signal processing device? The NPN BCR119WH6327XTSA1 digital transistor, developed by Infineon Technologies, can provide a solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 120@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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