10-25% de reduction
Diodes IncorporatedBCP5316TAGP BJT
Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 100 | |
| 80 | |
| 5 | |
| -65 to 150 | |
| 0.1 | |
| 0.5@50mA@500mA | |
| 1 | |
| 100 | |
| 25@5mA@2V|40@150mA@2V|25@500mA@2V|100@150mA@2V | |
| 2000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6 mm |
| Largeur du paquet | 3.5 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
Design various electronic circuits with this versatile PNP BCP5316TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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