10-25% de reduction
Diodes IncorporatedBC857BLP4-7BGP BJT
Trans GP BJT PNP 45V 0.1A 1000mW 3-Pin X2-DFN T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 5 | |
| 0.7(Typ)@0.5mA@10mA|0.85(Typ)@5mA@100mA | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 220@2mA@5V | |
| 1000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.35(Max) |
| Largeur du paquet | 1 |
| Longueur du paquet | 0.6 |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | X2-DFN |
| 3 | |
| Forme de sonde | No Lead |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP BC857BLP4-7B general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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