onsemiBC846BPDW1T1GGP BJT

Trans GP BJT NPN/PNP 65V 0.1A 380mW 6-Pin SC-88 T/R

Do you require a transistor in your circuit operating in the high-voltage range? This npn and PNP BC846BPDW1T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is your solution. This bipolar junction transistor's maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6@NPN|5@PNP V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
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