NXP SemiconductorsBC846BMB,315GP BJT
Trans GP BJT NPN 65V 0.1A 250mW 3-Pin DFN-B T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 80 | |
| 65 | |
| 6 | |
| 0.76(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.2@0.5mA@10mA|0.4@5mA@100mA | |
| 0.1 | |
| 200@2mA@5V | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.36(Max) |
| Largeur du paquet | 1 |
| Longueur du paquet | 0.6 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN-B |
| 3 |
The NPN BC846BMB,315 general purpose bipolar junction transistor, developed by NXP Semiconductors, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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