Infineon Technologies AGBC817K16E6327HTSA1GP BJT
Trans GP BJT NPN 45V 0.5A 500mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 5 | |
| 150 | |
| 0.1 | |
| 1.2@50mA@500mA | |
| 0.7@50mA@500mA | |
| 0.5 | |
| 100 | |
| 40@500mA@1V|100@100mA@1V | |
| 500 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Installation | Surface Mount |
| Hauteur du paquet | 1(Max) mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Implement this versatile NPN BC817K16E6327HTSA1 GP BJT from Infineon Technologies into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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