| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 5 | |
| 0.7@50mA@500mA | |
| 0.8 | |
| 100 | |
| 100@100mA@1V|60@300mA@1V | |
| 625 | |
| -55 | |
| 150 | |
| Box | |
| Installation | Through Hole |
| Hauteur du paquet | 5.33(Max) mm |
| Largeur du paquet | 4.19(Max) mm |
| Longueur du paquet | 5.2(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-92 |
| 3 | |
| Forme de sonde | Through Hole |
Compared to other transistors, the NPN BC337G general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This product comes packaged in bulk, so the parts will be stored loosely. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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