Alpha and Omega SemiconductorAOV20S60MOSFET
Trans MOSFET N-CH 600V 18A 4-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4.1 | |
| 18 | |
| 100 | |
| 1 | |
| 250@10V | |
| 20@10V | |
| 20 | |
| 1038@100V | |
| 278000 | |
| 30 | |
| 32 | |
| 87.5 | |
| 27.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 210@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.05(Max) mm |
| Largeur du paquet | 8 mm |
| Longueur du paquet | 8 mm |
| Carte électronique changée | 4 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN EP |
| 4 | |
| Forme de sonde | No Lead |
Make an effective common source amplifier using this AOV20S60 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 278000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with alphamos technology.
| EDA / CAD Models |
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