| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 1.3 | |
| 47 | |
| 100 | |
| 1 | |
| 2.1@10V | |
| 100@4.5V|235@10V | |
| 235 | |
| 10290@10V | |
| 7300 | |
| 90 | |
| 18 | |
| 282 | |
| 9 | |
| -55 | |
| 150 | |
| 1.7@10V|2@4.5V|2.8@2.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.95(Max) mm |
| Largeur du paquet | 5.55 mm |
| Longueur du paquet | 5.2 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN EP |
| 8 | |
| Forme de sonde | No Lead |
Create an effective common drain amplifier using this AON6411 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 156000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with tmos technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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