Alpha and Omega SemiconductorAON2409MOSFET
Trans MOSFET P-CH 30V 8A 6-Pin DFN-B EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 2.3 | |
| 8 | |
| 100 | |
| 1 | |
| 32@10V | |
| 6@4.5V|12@10V | |
| 12 | |
| 530@15V | |
| 2800 | |
| 11.5 | |
| 5.5 | |
| 26.3 | |
| 7.7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 26.5@10V|42@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.55(Max) mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN-B EP |
| 6 |
Looking for a component that can both amplify and switch between signals within your circuit? The AON2409 power MOSFET from Alpha & Omega Semiconductor provides the solution. Its maximum power dissipation is 2800 mW. This device is made with tmos technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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