Alpha and Omega SemiconductorAON2260MOSFET
Trans MOSFET N-CH 60V 6A 6-Pin DFN-B EP T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.5 | |
| 6 | |
| 100 | |
| 1 | |
| 44@10V | |
| 2.6@4.5V|6.1@10V | |
| 6.1 | |
| 426@30V | |
| 2800 | |
| 1.5 | |
| 2.5 | |
| 15 | |
| 3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 36@10V|42@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.55(Max) mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN-B EP |
| 6 |
Create an effective common drain amplifier using this AON2260 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 2800 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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