Alpha and Omega SemiconductorAOD7N65MOSFET
Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| ±30 | |
| 4.5 | |
| 7 | |
| 100 | |
| 1 | |
| 1560@10V | |
| 19.6@10V | |
| 19.6 | |
| 982@25V | |
| 178000 | |
| 32 | |
| 43 | |
| 53 | |
| 26 | |
| -50 | |
| 150 | |
| Tape and Reel | |
| 1200@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.29 mm |
| Largeur du paquet | 6.1 mm |
| Longueur du paquet | 6.6 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
Make an effective common gate amplifier using this AOD7N65 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 178000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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