Alpha and Omega SemiconductorAOD417MOSFET
Trans MOSFET P-CH 30V 25A 3-Pin(2+Tab) DPAK
| Compliant | |
| EAR99 | |
| Obsolete | |
| AOD417 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 25 | |
| 34@10V | |
| 8.2@4.5V|16.2@10V | |
| 16.2 | |
| 920@15V | |
| 2500 | |
| 26 | |
| 30 | |
| 22 | |
| 8 | |
| -55 | |
| 175 | |
| 27@10V|40@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.29 mm |
| Largeur du paquet | 6.1 mm |
| Longueur du paquet | 6.6 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
This AOD417 power MOSFET from Alpha & Omega Semiconductor can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 2500 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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