Alpha and Omega SemiconductorAOD2N60MOSFET
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 2 | |
| 4400@10V | |
| 9.5@10V | |
| 9.5 | |
| 270@25V | |
| 56800 | |
| 17 | |
| 14.3 | |
| 27 | |
| 17.2 | |
| -50 | |
| 150 | |
| 3600@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.29 mm |
| Largeur du paquet | 6.1 mm |
| Longueur du paquet | 6.6 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 |
As an alternative to traditional transistors, the AOD2N60 power MOSFET from Alpha & Omega Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 56800 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C.
| EDA / CAD Models |
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