| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 30 | |
| ±20 | |
| 5 | |
| 46@10V | |
| 4.6@4.5V|9.2@10V | |
| 9.2 | |
| 520@15V | |
| 2000 | |
| 7 | |
| 5.5 | |
| 19 | |
| 7.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 32@10V|51@4.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the AO4803A power MOSFET, developed by Alpha & Omega Semiconductor. Its maximum power dissipation is 2000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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