| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 1.6 | |
| 20 | |
| 100 | |
| 1 | |
| 5.5@4.5V | |
| 36@4.5V | |
| 3860@10V | |
| 3100 | |
| 18 | |
| 8 | |
| 70 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 4.6@4.5V|5.5@2.5V | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this AO4402 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 3100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology.
| EDA / CAD Models |
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