| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 60 | |
| ±20 | |
| 0.37 | |
| 10000 | |
| 1 | |
| 4200@10V | |
| 0.84@10V | |
| 0.84 | |
| 24.1@20V | |
| 600 | |
| 41 | |
| 15.2 | |
| 113 | |
| 18.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.9 mm |
| Largeur du paquet | 1.6 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | CPH |
| 3 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor's 6HP04CH-TL-W power MOSFET can provide a solution. Its maximum power dissipation is 600 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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