STMicroelectronics2STC4467GP BJT
Trans GP BJT NPN 120V 8A 80000mW 3-Pin(3+Tab) TO-3P Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 120 | |
| 120 | |
| 6 | |
| 1.5@300mA@3A | |
| 8 | |
| 70@3A@4V | |
| 80000 | |
| -65 | |
| 150 | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 15.1 mm |
| Largeur du paquet | 5(Max) mm |
| Longueur du paquet | 15.8(Max) mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3P |
| 3 | |
| Forme de sonde | Through Hole |
STMicroelectronics has the solution to your circuit's high-voltage requirements with their NPN 2STC4467 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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