Toshiba2SK3301(TE16L1,NQ)MOSFET
Trans MOSFET N-CH Si 900V 1A 3-Pin(2+Tab) New PW-Mold T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 2SK3301TE16L1NQ | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 900 | |
| ±30 | |
| 1 | |
| 20000@10V | |
| 6@10V | |
| 6 | |
| 165@25V | |
| 20000 | |
| 40 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 15000@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 mm |
| Largeur du paquet | 5.5 mm |
| Longueur du paquet | 6.5 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | New PW-Mold |
| 3 |
Create an effective common drain amplifier using this 2SK3301(TE16L1,NQ) power MOSFET from Toshiba. Its maximum power dissipation is 20000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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