onsemi2SD1805F-TL-EGP BJT

Trans GP BJT NPN 20V 5A 1000mW 3-Pin(2+Tab) DPAK T/R

ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN 2SD1805F-TL-E general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

700 pièces: Livraison en 2 jours

    Total$328.02Price for 700

    • (700)

      Livraison en 2 jours

      Ships from:
      Pays Bas
      Date Code:
      2428+
      Manufacturer Lead Time:
      16 semaines
      Country Of origin:
      Chine
      • In Stock: 700 pièces
      • Price: $0.4686

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