| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 120 | |
| 120 | |
| 5 | |
| 0.3@1mA@10mA | |
| 0.1 | |
| 100 | |
| 200@2mA@6V | |
| 150 | |
| -55 | |
| 125 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1 |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | S-Mini |
| 3 | |
| Forme de sonde | Gull-wing |
Design various electronic circuits with this versatile NPN 2SC3324GRTE85LF GP BJT from Toshiba. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 125 °C.
| EDA / CAD Models |
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