25-50% de réduction
onsemi2SB1201S-TL-EGP BJT
Trans GP BJT PNP 50V 2A 800mW 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 50 | |
| 6 | |
| 1.2@50mA@1A | |
| 0.7@50mA@1A | |
| 2 | |
| 140@100mA@2V | |
| 800 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.3 |
| Largeur du paquet | 5.5 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DPAK |
| 3 | |
| Forme de sonde | Gull-wing |
Design various electronic circuits with this versatile PNP 2SB1201S-TL-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 800 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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