10-25% de reduction
onsemi2SA2153-TD-EGP BJT
Trans GP BJT PNP 50V 2A 1300mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 50 | |
| 50 | |
| 6 | |
| 1.2@50mA@1A | |
| 0.4@50mA@1A | |
| 2 | |
| 200@100mA@2V|40@1.5A@2V | |
| 1300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 mm |
| Largeur du paquet | 2.5 mm |
| Longueur du paquet | 4.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 | |
| Forme de sonde | Flat |
Compared to other transistors, the PNP 2SA2153-TD-E general purpose bipolar junction transistor, developed by ON Semiconductor, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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