| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.55 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual Common Emitter | |
| 2 | |
| 50 | |
| 50 | |
| 5 | |
| 0.3@10mA@100mA | |
| 0.15 | |
| 200@2mA@6V | |
| 300 | |
| -55 | |
| 125 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.1 |
| Largeur du paquet | 1.6 |
| Longueur du paquet | 2.9 |
| Carte électronique changée | 5 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SMV |
| 5 | |
| Forme de sonde | Gull-wing |
The versatility of this PNP 2SA1618-GR(TE85L,F GP BJT from Toshiba makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C.
| EDA / CAD Models |
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