| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.5 | |
| -55 to 150 | |
| 0.115 | |
| 100 | |
| 1 | |
| 7500@10V | |
| 22@25V | |
| 2@25V | |
| 1 | |
| 11 | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2400@10V|3200@5 | |
| 20 | |
| 0.8 | |
| 4 | |
| 2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.02(Max) mm |
| Largeur du paquet | 1.4(Max) mm |
| Longueur du paquet | 3.04(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
This 2N7002-T1-E3 power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 200 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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