| Compliant | |
| EAR99 | |
| Active | |
| 8541.49.70.80 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Dual | |
| 2 | |
| 60 | |
| 60 | |
| 5 | |
| 1.3@15mA@150mA|2.6@50mA@500mA | |
| 0.4@15mA@150mA|1.6@50mA@500mA | |
| 0.6 | |
| 75@100uA@10V|100@1mA@10V|100@10mA@10V|100@150mA@10V|50@300mA@10V|50@150mA@1V | |
| 600 | |
| -65 | |
| 200 | |
| Waffle | |
| Installation | Surface Mount |
| Hauteur du paquet | 2.03(Max) |
| Largeur du paquet | 4.45(Max) |
| Longueur du paquet | 6.35(Max) |
| Carte électronique changée | 6 |
| Conditionnement du fournisseur | CSMD |
| 6 | |
| Forme de sonde | No Lead |
Design various electronic circuits with this versatile PNP 2N5796U GP BJT from Optek Technology (TT electronics). This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.