| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 5 | |
| -65 to 150 | |
| 1 | |
| 1.3@0.1A@1A | |
| 0.6@0.1A@1A | |
| 1 | |
| 100000 | |
| 40@50mA@1V|30@500mA@1V|10@1A@1V | |
| 30000 | |
| -65 | |
| 150 | |
| Box | |
| Installation | Through Hole |
| Hauteur du paquet | 10.85 |
| Largeur du paquet | 2.7 |
| Longueur du paquet | 7.6 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-225 |
| 3 | |
| Forme de sonde | Through Hole |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN 2N4923G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 30000 mW. This product comes packaged in bulk, so the parts will be stored loosely. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |
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