| Supplier Unconfirmed | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 90 | |
| 65 | |
| 7 | |
| -65 to 200 | |
| 0.5 | |
| 0.65@15mA@150mA | |
| 1 | |
| 1000 | |
| 20@0.1mA@10V|40@150mA@10V|20@500mA@10V | |
| 1000 | |
| -65 | |
| 200 | |
| Box | |
| Diamètre | 9.4(Max) mm |
| Installation | Through Hole |
| Hauteur du paquet | 6.6(Max) mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-39 |
| 3 | |
| Forme de sonde | Through Hole |
Look no further than Central Semiconductor's PNP 2N4036 general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 7000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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