| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 160 | |
| 140 | |
| 7 | |
| -65 to 200 | |
| 5@2A@10A | |
| 10 | |
| 7.5@10A@4V|20@3A@4V | |
| 117000 | |
| -65 | |
| 200 | |
| Tray | |
| Installation | Through Hole |
| Hauteur du paquet | 8.51(Max) |
| Largeur du paquet | 26.67(Max) |
| Longueur du paquet | 39.37 |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-3 |
| 3 | |
| Forme de sonde | Through Hole |
Design various electronic circuits with this versatile NPN 2N3442G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 117000 mW. This component will be shipped in tray format. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 140 V and a maximum emitter base voltage of 7 V.
| EDA / CAD Models |
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