TT Electronics / Semelab Diodes, Transistors and Thyristors
332 TT Electronics / Semelab Diodes, Transistors and Thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Material | Category | Channel Type | Configuration | Channel Mode | Peak Reverse Repetitive Voltage - (V) | Number of Elements per Chip | Maximum Collector-Emitter Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Maximum Continuous Forward Current - (A) | Maximum Continuous DC Collector Current - (mA) | Maximum Collector-Base Voltage - (V) | Maximum Drain-Gate Voltage - (V) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Power Dissipation - (mW) | Maximum Drain-Source Voltage - (V) | Maximum Continuous Drain Current - (mA) | Maximum Base-Emitter Voltage - (V) | Maximum Gate-Source Voltage - (V) | Maximum Forward Voltage - (V) | Maximum DC Collector Current - (A) | Peak Reverse Current - (uA) | Operational Bias Conditions | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Maximum Transition Frequency - (MHz) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Minimum Frequency - (MHz) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical Power Gain - (dB) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Process Technology | Rad Hard | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | ESCC Qualified | Military | AEC Qualified | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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| D1006UK Trans RF MOSFET N-CH 70V 30A 6-Pin Case DV |
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Semelab | RF MOSFET | Si | N | Single Quad Source | Enhancement | 1 | 220000 | 70 | 30 | ±20 | 7 | 360(Max)@0V | 1 | 200 | 14(Min) | 6 | Case DV | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1014UK Trans RF MOSFET N-CH 70V 10A 3-Pin Case DP |
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Semelab | RF MOSFET | Si | N | Single | Enhancement | 1 | 87500 | 70 | 10 | ±20 | 120(Max)@0V | 1 | 40 | 500 | 12(Min) | 3 | Case DP | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1027UK Trans RF MOSFET N-CH 70V 30A 5-Pin Case DR |
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Semelab | RF MOSFET | Si | N | Dual Common Source | Enhancement | 2 | 438000 | 70 | 30 | ±20 | 360(Max)@28V | 1 | 150 | 200 | 13(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D1031UK Trans RF MOSFET 70V 5A 8-Pin Case F-0127 |
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Semelab | RF MOSFET | Si | Dual Quad Source | 2 | 30000 | 70 | 5 | ±20 | 7 | 60(Max)@0V | 1 | 10 | 1000 | 13(Min) | 8 | Case F-0127 | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D2220UK Trans RF MOSFET 40V 4A 8-Pin SO |
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Semelab | RF MOSFET | Si | Dual Quad Source | 2 | 17500 | 40 | 4 | ±20 | 24(Max)@0V | 1 | 5 | 2000 | 10(Min) | 8 | SO | SO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D5002UK Trans RF MOSFET N-CH 125V 6A 4-Pin Case DA |
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Semelab | RF MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 87000 | 125 | 6 | ±20 | 120(Max)@50V | 1 | 40 | 175 | 16(Min) | 4 | Case DA | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| DMD1029 Trans RF MOSFET N-CH 70V 35A 5-Pin Case D1 |
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Semelab | RF MOSFET | Si | N | Dual Common Source | Enhancement | 2 | 875000 | 70 | 35 | ±20 | 7 | 420(Max)@28V | 1 | 400 | 16(Min) | 5 | Case D1 | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| BDX62B BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED TO3 METAL PACKAGE |
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Semelab | Darlington BJT | 3 | TO-3 | TO | No | No | No | No | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||
| D1030UK Trans RF MOSFET N-CH 70V 40A 5-Pin Case DR |
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Semelab | RF MOSFET | Si | N | Dual Common Source | Enhancement | 2 | 500000 | 70 | 40 | ±20 | 480(Max)@28V | 1 | 200 | 13(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D1203UK Trans RF MOSFET N-CH 40V 30A 4-Pin Case DM |
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Semelab | RF MOSFET | Si | N | Single Dual Source | Enhancement | 1 | 117000 | 40 | 30 | ±20 | 180(Max)@0V | 1 | 30 | 200 | 10(Min) | 4 | Case DM | No | No | No | No | No | 5A991g. | No | No | ||||||||||||||||||||||||||||||||||||
| D1222UK Trans RF MOSFET 40V 30A 5-Pin Case DK |
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Semelab | RF MOSFET | Dual Common Source | 2 | 290000 | 40 | 30 | ±20 | 7 | 180(Max)@0V | 1 | 500 | 10(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| D2006UK Trans RF MOSFET 65V 5-Pin Case DK |
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Semelab | RF MOSFET | Si | Dual Common Source | 2 | 70000 | 65 | ±20 | 7 | 36(Max)@0V | 2000 | 13(Min) | 5 | Case DK | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||||||
| D2219UKTR Trans RF MOSFET N-CH 40V 2A |
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Semelab | RF MOSFET | Si | N | Dual Quad Source | Enhancement | 2 | 17500 | 40 | 2 | ±20 | 12(Max)@0V | 1 | 2.5 | 1000 | 10(Min) | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||
| BDY28B Trans GP BJT NPN 250V 6A 50000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 1 | 250 | 1.2@0.25A@2A | 500 | 50000 | 10 | 6 | 30 to 50 | 30@2A@4V | 3.5 | 65 | 0.6@0.25A@2A | 1000 | 3 | TO-3 | TO | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N3501CSM4-JQR-B
Trans GP BJT NPN 150V 0.3A 500mW 4-Pin CLLCC-3
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Semelab | GP BJT | NPN | Si | Bipolar Small Signal | Single | 1 | 150 | 0.8@1mA@10mA|0.9@5mA@50mA|1.2@15mA@150mA | 150 | 500 | 6 | 0.3 | 350 | 2 to 30|30 to 50|50 to 120 | 35@0.1mA@10V|50@1mA@10V|75@10mA@10V|100@150mA@10V|20@300mA@10V | 80(Max) | 8(Max) | 0.2@1mA@10mA|0.25@5mA@50mA|0.4@15mA@150mA | 4 | CLLCC-3 | LCC | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
2N5153
Trans GP BJT PNP 80V 5A 3-Pin TO-39
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Semelab | GP BJT | PNP | Si | Bipolar Power | Single | 1 | 80 | 1.45@250mA@2.5A|2.2@500mA@5A | 100 | 1000 | 5.5 | 5 | 30 to 50|50 to 120 | 50@50mA@5V|70@2.5A@5V|35@2.5A@5V | 0.75@250mA@2.5A|1.5@500mA@5A | 3 | TO-39 | TO | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| 2N5153-220M Trans GP BJT NPN 80V 5A 4400mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 80 | 1.45@250mA@2.5A|2.2@500mA@5A | 100 | 4400 | 5.5 | 5 | 40 | 30 to 50|50 to 120 | 40@5A@5V|70@2.5A@5V|50@50mA@5V | 7 | 250(Max) | 0.75@250mA@2.5A|1.5@500mA@5A | 500(Typ) | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||
| 2N6250 Trans GP BJT NPN 275V 10A 100000mW 3-Pin(2+Tab) TO-3 |
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Semelab | GP BJT | NPN | Bipolar Power | Single | 1 | 275 | 100000 | 10 | 2 to 30 | 8@10A@3V | 3 | TO-3 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||||||
| IRFE130 Trans MOSFET N-CH 100V 7.4A 16-Pin LCC-4 |
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Semelab | MOSFET | Power MOSFET | N | Single Hex Drain Dual Gate Octal Source | Enhancement | 1 | 22000 | 100 | 7.4 | ±20 | 4 | 207@10V | 28.5(Max)@10V | 28.5(Max) | 650@25V | 16 | LCC-4 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||
2N2222ADCSM
Trans GP BJT NPN 50V 0.8A 6-Pin CLLCC-2
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Semelab | GP BJT | NPN | Bipolar Power | Single | 1 | 50 | 1.2@15mA@150mA|2@50mA@500mA | 75 | 500 | 6 | 0.8 | 325 | 30 to 50|50 to 120 | 50@0.1mA@10V|75@1mA@10V|100@10mA@10V|100@150mA@10V|30@500mA@10V | 250 | 0.3@15mA@150mA|1@50mA@500mA | 35 | 6 | CLLCC-2 | LCC | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||
| BDS12 Trans GP BJT NPN 100V 15A 43750mW 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 100 | 2.5@2.5A@10A | 100 | 43750 | 5 | 15 | 2 to 30|30 to 50 | 40@0.5A@4V|15@5A@4V|5@10A@4V | 1@0.5A@5A|3@2.5A@10A | 3 | TO-257AB | Unknown | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
2N3209X
Trans GP BJT PNP 20V 0.2A 360mW 3-Pin TO-18
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Semelab | GP BJT | PNP | Si | Bipolar Power | Single | 1 | 20 | 0.98@1mA@10mA|1.2@3mA@30mA|1.7@10mA@100mA | 20 | 360 | 4 | 0.2 | 486 | 2 to 30|30 to 50 | 25@10mA@0.3V|30@30mA@0.5V|15@100mA@1V | 146 | 6(Max) | 5(Max) | 0.2@1mA@10mA|0.25@3mA@30mA|0.75@10mA@100mA | 60 | 3 | TO-18 | TO | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||
| BDS20 Trans GP BJT NPN 80V 5A 3-Pin(3+Tab) TO-257AB |
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Semelab | GP BJT | NPN | Si | Bipolar Power | Single | 1 | 80 | 80 | 35000 | 5 | 5 | 500 to 3600 | 1000@0.5A@3V|1000@3A@3V | 2@12mA@3A|4@20mA@5A | 3 | TO-257AB | No | No | No | No | No | EAR99 | No | No | |||||||||||||||||||||||||||||||||||||
| D1010UK Trans RF MOSFET N-CH 70V 20A 5-Pin Case DR |
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Semelab | RF MOSFET | Si | N | Dual Common Source | Enhancement | 2 | 389000 | 70 | 20 | ±20 | 240(Max)@0V | 1 | 125 | 500 | 10(Min) | 5 | Case DR | No | No | No | No | No | EAR99 | No | No | ||||||||||||||||||||||||||||||||||||
| D2089UK Trans RF MOSFET N-CH 65V 1A 4-Pin Case E-16 |
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Semelab | RF MOSFET | Si | N | Single Dual Source | 1 | 4000 | 65 | 1 | ±20 | 12(Max)@0V | 0 | 0.75(Min) | 2000 | 4 | Case E-16 | No | No | No | No | No | EAR99 | No | No |