Toshiba Diodes, transistors, thyristors
3 743 Toshiba Diodes, transistors, thyristors
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| N° de référence | Prix | Stock | Fabricant | Catégorie | Type | Maximum Rate of Rise of Off-State Voltage - (V/us) | Category | Maximum Rate of Rise of On-State Current - (A/us) | Material | Frequency Band | Channel Type | Maximum Gate Trigger Voltage - (V) | Configuration | Channel Mode | Typical Zener Voltage - (V) | Repetitive Peak Reverse Voltage - (V) | Peak Reverse Repetitive Voltage - (V) | Maximum Reverse Voltage - (V) | Maximum Gate Trigger Current - (mA) | Maximum Gate Emitter Voltage - (V) | Maximum Collector-Emitter Voltage - (V) | Zener Voltage Tolerance | Surge Current Rating - (A) | Maximum Reverse Current - (uA) | Maximum Continuous Forward Current - (A) | Maximum Collector-Base Voltage - (V) | Number of Elements per Chip | Minimum Tuning Ratio | Maximum Holding Current - (mA) | Maximum Drain-Gate Voltage - (V) | Maximum Continuous DC Collector Current - (A) | Maximum Base-Emitter Voltage - (V) | Typical Input Resistance - (kOhm) | Tuning Ratio Test Condition | Test Current - (mA) | Peak Non-Repetitive Forward Surge Current - (A) | Maximum Series Resistance @ Maximum IF - (Ohm) | Maximum Forward Voltage - (V) | Maximum Drain-Source Voltage - (V) | Maximum Base-Emitter Saturation Voltage - (V) | Typical Resistor Ratio | Peak Reverse Current - (uA) | Maximum Reverse Leakage Current - (uA) | Maximum Gate-Source Voltage - (V) | Maximum DC Collector Current - (A) | Peak On-State Voltage - (V) | Operational Bias Conditions | Minimum Diode Capacitance - (pF) | Maximum Junction Ambient Thermal Resistance | Maximum Gate Threshold Voltage - (V) | Maximum Gate Peak Inverse Voltage - (V) | Maximum Zener Impedance - (Ohm) | Maximum Power Dissipation - (mW) | Maximum Power Dissipation @ 25C - (mW) | Maximum Diode Capacitance - (pF) | Maximum Continuous Drain Current - (A) | RMS On-State Current - (A) | Repetitive Peak Forward Blocking Voltage - (V) | Rated Average On-State Current - (A) | Peak Reverse Recovery Time - (ns) | Minimum DC Current Gain Range | Minimum DC Current Gain | Maximum Drain-Source Resistance - (mOhm) | Typical Gate Charge @ Vgs - (nC) | Repetitive Peak Off-State Current - (mA) | Maximum Junction Case Thermal Resistance | Typical Input Capacitance - (pF) | Typical Gate Charge @ 10V - (nC) | Typical Output Capacitance - (pF) | Typical Input Capacitance @ Vds - (pF) | Typical Power Gain - (dB) | Maximum Output Power - (W) | Maximum Collector-Emitter Saturation Voltage - (V) | Maximum Frequency - (MHz) | Typical 3rd Order Intercept Point - (dBm) | Maximum Transition Frequency - (MHz) | Maximum Noise Figure - (dB) | Maximum Turn-On Time - (ns) | Typical Drain-Source Resistance @ 25°C - (mOhm) | Process Technology | Packaging | Pin Count | Supplier Package | Standard Package Name | CECC Qualified | ESD Protection | Military | AEC Qualified | AEC Qualified Number | Auto motive | P PAP | ECCN Code | SVHC | SVHC Exceeds Threshold |
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TPN22006NH,LQ(S
Trans MOSFET N-CH Si 60V 21A 8-Pin TSON EP Advance T/R
|
Stock
980
De $0.192 à $0.531
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 60 | ±20 | 18000 | 21 | 22@10V | 12@10V | 12 | 710@30V | Tape and Reel | 8 | TSON EP Advance | SON | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10A60W,S4VX(M
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) TO-220SIS Magazine
|
Stock
35
De $0.59 à $0.69
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 30000 | 9.7 | 380@10V | 20@10V | 700@300V | 3 | TO-220SIS | TO | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS190(TE85L,F)
Diode Switching 85V 0.1A 3-Pin S-Mini T/R Automotive AEC-Q101
|
Stock
778
De $0.0764 à $0.14
Par unité
|
Toshiba | Rectifiers | Switching Diode | Single | 85 | 0.1 | 2 | 1.2@0.1A | 0.5 | 150 | 4 | Tape and Reel | 3 | S-Mini | SOT | No | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SA1832-GR,LF(T
Trans GP BJT PNP 50V 0.15A 100mW 3-Pin SSM T/R Automotive AEC-Q101
|
Stock
2 760
De $0.0433 à $0.11
Par unité
|
Toshiba | GP BJT | PNP | Bipolar Small Signal | Si | Single | 50 | 50 | 1 | 5 | 0.15 | 100 | 200 to 300 | 200@2mA@6V | 0.3@10mA@100mA | Tape and Reel | 3 | SSM | No | Yes | AEC-Q101 | Yes | Unknown | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK5R1E06PL,S1X(S
MOSFETs Silicon N-channel MOS
|
Stock
49
De $0.593 à $0.75
Par unité
|
Toshiba | MOSFET | 87000 | 3 | TO-220 | TO | No | No | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
2SC6135,LF(T
Trans GP BJT NPN 50V 1A 800mW 3-Pin UFM T/R
|
Stock
407
De $0.136 à $0.151
Par unité
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Single | 50 | 100 | 1 | 7 | 1.1@6mA@300mA | 1 | 800 | 200 to 300|300 to 500 | 400@0.1A@2V|200@0.3A@2V | 0.12@6mA@300mA | Tape and Reel | 3 | UFM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS12E65C,S1AQ(S
Diode Schottky SiC 650V 12A 2-Pin(2+Tab) TO-220-L Tube
|
Stock
50
De $7.65 à $11.70
Par unité
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 12 | 1.7 | 90 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK100A06N1,S4X(S
Trans MOSFET N-CH Si 60V 263A 3-Pin(3+Tab) TO-220SIS Magazine
|
Stock
750
$1.9026
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 60 | ±20 | 45000 | 263 | 2.7@10V | 140@10V | 140 | 10500@30V | Magazine | 3 | TO-220SIS | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN2705JE(TE85L,F)
Trans Digital BJT PNP 50V 0.1A 200mW 5-Pin ESV T/R
|
Stock
3 215
De $0.0862 à $0.225
Par unité
|
Toshiba | BJT numérique | PNP | Dual Common Emitter | 50 | 0.1 | 2.2 | 0.0468 | 200 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | ESV | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7P60W5,RVQ(S
Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
|
Stock
1 504
De $0.531 à $1.56
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 4.5 | 60000 | 7 | 670@10V | 16@10V | 16 | 490@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN4C06J-GR(TE85L,F
Trans GP BJT NPN 120V 0.1A 300mW 5-Pin SMV T/R
|
Stock
5
$0.491
Par unité
|
Toshiba | GP BJT | NPN | Bipolar Small Signal | Si | Dual Common Emitter | 120 | 120 | 2 | 5 | 0.1 | 300 | 200 to 300 | 200@2mA@6V | 0.3@1mA@10mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TRS8E65F,S1Q(S
Diode Schottky SiC 650V 8A 2-Pin(2+Tab) TO-220-L Tube
|
Stock
49
De $20.00 à $26.30
Par unité
|
Toshiba | Rectifiers | Schottky Diode | SiC | Single | 650 | 8 | 69 | 1.6 | 40 | Tube | 2 | TO-220-L | No | No | No | No | EAR99 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK7J90E,S1E(S
Trans MOSFET N-CH Si 900V 7A 3-Pin(3+Tab) TO-3PN
|
Stock
27
De $1.83 à $3.78
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 900 | ±30 | 200000 | 7 | 2000@10V | 32@10V | 1350@25V | 3 | TO-3PN | TO | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6J215FE(TE85L,F
Trans MOSFET P-CH Si 20V 3.4A 6-Pin ES T/R
|
Stock
4 000
De $0.153 à $0.48
Par unité
|
Toshiba | MOSFET | Small Signal | Si | P | Single Quad Drain | Enhancement | 1 | 20 | ±8 | 1 | 500 | 3.4 | 59@4.5V | 10.4@4.5V | 630@10V | Tape and Reel | 6 | ES | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPH9R00CQH,LQ(M1
Trans MOSFET N-CH Si 150V 108A 8-Pin SOP Advance T/R
|
Stock
4 770
De $1.01 à $2.99
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single Quad Drain Triple Source | Enhancement | 1 | 150 | ±20 | 3000 | 108 | 9@10V | 36@8V|44@10V | 44 | 3500@75V | Tape and Reel | 8 | SOP Advance | SO | No | No | No | No | EAR99 | Yes | Yes | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK9P65W,RQ
Trans MOSFET N-CH Si 650V 9.3A 3-Pin(2+Tab) DPAK T/R
|
Stock
1 864
$0.646
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 80000 | 9.3 | 560@10V | 20@10V | 20 | 700@300V | Tape and Reel | 3 | DPAK | TO | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK10Q60W,S1VQ
Trans MOSFET N-CH Si 600V 9.7A 3-Pin(3+Tab) IPAK Tube
|
Stock
65
$1.0241
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 600 | ±30 | 3.7 | 80000 | 9.7 | 430@10V | 20@10V | 20 | 700@300V | Tube | 3 | IPAK | TO | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
1SS378(TE85L,F)
Diode Small Signal Schottky 15V 0.2A 3-Pin USM T/R
|
Stock
2 075
De $0.0641 à $0.137
Par unité
|
Toshiba | Rectifiers | Small Signal Schottky Diode | Dual Common Cathode | 15 | 0.2 | 1 | 0.5@0.1A | 20 | 100 | Tape and Reel | 3 | USM | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TK14G65W,RQ(S
Trans MOSFET N-CH Si 650V 13.7A 3-Pin(2+Tab) D2PAK T/R
|
Stock
875
De $1.19 à $2.78
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Single | Enhancement | 1 | 650 | ±30 | 130000 | 13.7 | 250@10V | 35@10V | 35 | 1300@300V | Tape and Reel | 3 | D2PAK | TO | No | No | No | No | No | EAR99 | Yes | Yes | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CMH01(T2L,TEMQ)
Diode Switching 200V 3A 2-Pin M-FLAT T/R
|
Stock
44
$0.283
Par unité
|
Toshiba | Rectifiers | Switching Diode | Single | 200 | 3 | 40 | 0.98 | 10 | 35 | Tape and Reel | 2 | M-FLAT | No | No | No | No | No | EAR99 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM6N67NU,LF(T Trans MOSFET N-CH Si 30V 4A 6-Pin UDFN EP |
Stock
1 715
De $0.245 à $0.677
Par unité
|
Toshiba | MOSFET | Power MOSFET | Si | N | Dual | Enhancement | 2 | 30 | 12 | 2000 | 4 | 39.1@4.5V | 3.2@4.5V | 310@15V | 6 | UDFN EP | DFN | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R
|
Stock
1 765
De $0.0945 à $0.105
Par unité
|
Toshiba | GP BJT | NPN | Bipolar Power | Si | Single Hex Collector | 50 | 100 | 1 | 7 | 1.1@20mA@1A | 3 | 3000 | 200 to 300|300 to 500 | 200@1A@2V|400@0.3A@2V | 0.14@20mA@1A | Tape and Reel | 8 | PS | No | No | No | No | No | EAR99 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM5N15FE(TE85L,F)
Trans MOSFET N-CH Si 30V 0.1A 5-Pin ESV T/R
|
Stock
1 630
De $0.111 à $0.399
Par unité
|
Toshiba | MOSFET | Small Signal | Si | N | Dual Common Source | Enhancement | 2 | 30 | ±20 | 150 | 0.1 | 4000@4V | 7.8@3V | Tape and Reel | 5 | ESV | SOT | No | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1705JE(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 100mW 5-Pin ESV T/R
|
Stock
2 760
De $0.0898 à $0.235
Par unité
|
Toshiba | BJT numérique | NPN | Dual Common Emitter | 50 | 0.1 | 2.2 | 0.0468 | 100 | 80@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | ESV | SOT | No | No | No | No | EAR99 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
RN1502(TE85L,F)
Trans Digital BJT NPN 50V 0.1A 300mW 5-Pin SMV T/R
|
Stock
77
De $0.121 à $0.231
Par unité
|
Toshiba | BJT numérique | NPN | Dual Common Emitter | 50 | 0.1 | 10 | 1 | 300 | 50@10mA@5V | 0.3@0.25mA@5mA | Tape and Reel | 5 | SMV | SOT | No | No | No | No | No | EAR99 | No |